Recent Publications
Journal papers
  • S. Awasthi, H. -T. Hsu, Y. -F. Tsao, P. -H. Chiu, and A. Gupta, "A Computational Approach to Optimize the Linearity in Dual-gate InAlGaN/AlN/GaN HEMTs," Semiconductor Science and Technology, no. 39, 125009.
  • Y.-F. Tsao, A. Desai and H.-T. Hsu, "An SPDT Switch Design Featuring Minimum Phase Distortion Over Wide Input Power Drive for Phased-Array Antenna System Applications," IEEE Microwave and Wireless Technology Letters, vol. 34, no. 11, pp. 1251-1254, Nov. 2024.
  • H.-T. Hsu, Y.-F. Tsao and A. Desai, "A Single Radiator-Based Circularly Polarized Antenna for Indoor Wireless Communication Applications," IEEE Open Journal of Antennas and Propagation, vol. 5, no. 5, pp. 1320-1327, Oct. 2024.
  • H.-T. Hsu, Y.-F. Tsao and A. Desai, "High Gain Dual Wide-Band ±45° Dual Polarization (DWDP) Antenna for Indoor Distributed Antenna System (IDAS) Applications," International Journal of Communication Systems, vol. 37, no. 14, e5873, Sept. 2024.
  • Y.-F. Tsao, Y. Wang, P. -H. Chiu, and H.-T. Hsu, "Reliability Assessment of 60-GHz GaN Power Amplifier Under High-level Input RF Stress," IEEE Transactions on Electron Devices, vol. 71, no. 7, pp. 4087-4092, July 2024.
  • A. Desai, H.-T. Hsu, Y.-F. Tsao, B. M. Yousef and A. A. Ibrahim, "FSS Based High Gain Optically Transparent MIMO Antenna for Sub-6 GHz 5G Mid-Band Applications," Optik, vol. 307, 171829, April 2024.
  • P.-H. Chiu, Y.-F. Tsao, and H.-T. Hsu, "The Improvement of Device Linearity in AlGaN/GaN HEMTs at Millimeter-wave Frequencies using Dual-Gate Configuration," Results in Physics, vol. 59, 107612, April 2024.
  • H.-T. Hsu, Y.-F. Tsao and A. Desai, "Dual-Wideband Antenna with Dual Polarization and Enhanced Front-to-Back Ratio for High-Speed Communication Applications," AEU - International Journal of Electronics and Communications, vol. 174, 155072, Jan. 2024.
  • P. -H. Lee, Y. -C. Lin, H.-T. Hsu, C. -H. Yu, Y.-F. Tsao, P. Su and E. Y. Chang, "Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application," in IEEE Journal of the Electron Devices Society, vol. 11, pp. 744-751, 2023.
  • A. Desai, H.-T. Hsu, B. M. Yousef, A. M. Ameen, Y.-F. Tsao and A. A. Ibrahim, "UWB Connected Ground Transparent 4-Port Flexible MIMO Antenna for IoT Applications," in IEEE Internet of Things Journal, vol. 11, no. 7, pp. 12475-12484, April 2024.
  • P.-H. Lee, Y.-C. Lin, C.-C. Chung, K.-H. Lai, H.-T. Hsu, P. Su and E. Y. Chang, "Impact of Source Resistance on Linearity of AlGaN/GaN HEMTs at Ka-Band," in ECS Journal of Solid State Science and Technology, vol. 12, no. 10, 105001, Oct. 2023.
  • Y.-F. Tsao, P.-H. Chiu, S. A. Chevtchenko, I. Ostermay, J. Wuerfl and H.-T. Hsu, "Highly Robust GaN Power Amplifier at Millimeter-wave Frequencies using Sputtered Iridium Gate MMIC Technology," in IEEE Transactions on Electron Devices, vol. 70, no. 12, pp. 6244-6249, Dec. 2023.
  • T.-Y. Tsai, Y.-F. Tsao and H.-T. Hsu, "Analysis and Design of Shunt-type SPDT Switch at Millimeter-wave Frequencies Using Stacked-FET Configuration," AEU - International Journal of Electronics and Communications, vol. 172, 154948, Dec. 2023.
  • C. -M. Tsao and H. -T. Hsu, "An Ultra-Wideband, High Power and High Isolation Single-Pole-Double-Throw Switch Using Capacitive Loading Approach," IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 70, no. 11, pp. 4013-4017, Nov. 2023.
  • B. M. Yousef, A. M. Ameen, A. Desai, H.-T. Hsu, V. Dhasarathan, and A. A. Ibrahim "Defected ground structure-based wideband circularly polarized 4-port MIMO antenna for future Wi-Fi 6E applications," AEU - International Journal of Electronics and Communications, vol. 170, 154815, Oct. 2023.
  • C.-M. Tsao and H.-T. Hsu, "A Dual-Band Polarization Switchable Antenna Switch Module for 5G New-Radio Applications", in International Journal of Circuit Theory and Applications, Aug. 2023, doi: 10.1002/CTA.3778.
  • C. Wang, H. -T. Hsu, J. -L. Lin, Y. -C. Weng, Y.-F. Tsao, Y. Wang and E. Y. Chang, "Effect of the Barrier Thickness on DC and RF Performances of AlGaN/GaN HEMTs on Silicon," Semiconductor Science and Technology, Apr. 2023, doi: 10.1088/1361-6641/acd13c.
  • A. Desai, Y.-F. Tsao and H. -T. Hsu, "High Gain Substrate Integrated Waveguide Antenna with Enhanced Bandwidth for Millimeter-Wave Wireless Network Applications," Wireless Networks, doi: 10.1007/s11276-023-03296-7.
  • Y. -C. Weng, H. -T. Hsu, Y.-F. Tsao, D. Panda, H. -Y. Huang, M. -L. Kao, Y. -P. Lan, E. Y. Chang and C. -T. Lee, "Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering," ECS Journal of Solid State Science and Technology, 12, 035002, doi: 10.1149/2162-8777/acbf72.
  • Yu-Lin Chen, Wen-Kuan Yeh, Heng-Tung Hsu, Ke-Horng Chen, Der-Hsien Lien, Wen-Chin Lin, Tien-Han Yu, Yu-Sheng Chiu, D. Godwinraj D. Godfrey and Chien-Hung Wu, “The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs”, Journal of Electronic Materials, 52, 1391-1399, 2023, doi: 10.1007/s11664-022-10087-x.
  • Yu-Lin Chen, Wen-Kuan Yeh, Heng-Tung Hsu, Ke-Horng Chen, Wen-Chin Lin, Tien-Han Yu, Hung-Ting Chou, D. Godwin Raj and D. Godfrey, “Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks”, ECS Journal of Solid State Science and Technology, 12, 035007, doi: 10.1149/2162-8777/acc138.
  • Le Trung Hieu, Heng-Tung Hsu, Debashis Panda, Ching-Ting Lee, Chun-Hsiung Lin and Edward Yi Chang, “Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator”, ECS Journal of Solid State Science and Technology, 12, 025001, doi: 10.1149/2162-8777/acbb27.
  • Yu-Lin Chen, Wen-Kuan Yeh, Ke-Horng Chen, Heng-Tung Hsu, Chin-Tsai Hsu, D. Godwin Raj, Hung-Ting Chou, Jui-Sheng Wu, Tien-Han Yu and D. Godfrey, “Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length”, ECS Journal of Solid State Science and Technology, 12, 035001, doi: 10.1149/2162-8777/acbe19.
  • Le Trung Hieu, Heng-Tung Hsu, Chung-Han Chiang, Debashis Panda, Ching-Ting Lee, Chun-Hsiung Lin and Edward Yi Chang, “Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications”, Semiconductor Science and Technology, 38, 025006, doi: 10.1088/1361-6641/acac4b.
  • M. -W. Lee, Y. -C. Lin, K. -H. Lai, Y. -C. Weng, H. -T. Hsu and E. Y. Chang, "Study of AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate with Thick Copper-Metallized Interconnects for Ka-Band Applications," in Physica Status Solidi A, 2200536, doi: 10.1002/pssa.202200536.
  • Y.-F. Tsao, H. -T. Hsu and A. Desai, "High Power Handling GaAs SP4T Switch-based Beam-Switching Planar Antenna Module for 5G New-Radio FR2 Applications," in AEU - International Journal of Electronics and Communications, vol. 159, 154494, Feb. 2023.
  • Y. Wang, H. -T. Hsu and Y.-F. Tsao, "A 20-W Wideband Voltage Controlled Attenuator for Millimeter-wave Applications," in International Journal of Circuit Theory and Applications, vol. 51, no. 5, May 2023.
  • P. -H. Lee, Y. -C. Lin, H. -T. Hsu, Y.-F. Tsao, C. -F. Dee, P. Su, E. Y. Chang, "A Tall Gate Stem GaN HEMT with Improved Power Density and Efficiency at Ka-Band," in IEEE Journal of the Electron Devices Society, vol. 11, pp. 36-42, 2023, doi: 10.1109/JEDS.2023.3236304.
  • C. Y. Yang, J. H. Wu, C. H. Chung, J. Y. You, T. C. Yu, C. J. Ma, C. T. Lee, D. Ueda, H. T. Hsu, E. Y. Chang, "Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering," in IEEE Transactions on Electron Devices, vol. 69, no. 12, pp. 6644-6649, Dec. 2022.
  • T. -Y. Yang, H. -Y. Huang, Y. -K. Liang, J. -S. Wu, M. -Y. Kuo, K. -P. Chang, H. -T. Hsu, E. -Y. Chang, "A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications," in IEEE Electron Device Letters, vol. 43, no. 10, pp. 1629-1632, Oct. 2022.
  • A. Desai, Y.-F. Tsao, T. -J. Chang and H. -T. Hsu, "Rigorous Analysis and Investigation of the Bandwidth Broadening Mechanism in a Compact Power Divider With Physical Port Isolation," in IEEE Access, vol. 10, pp. 133655-133662, 2022.
  • Y. Wang, H. -T. Hsu, A. Desai and Y.-F. Tsao, "Design of a Compact RF Front-End Transceiver Module for 5G New-Radio Applications," in IEEE Transactions on Instrumentation and Measurement, vol. 72, pp. 1-9, 2023, Art no. 2000409.
  • Y.-F. Tsao, H. -S. Hsu, J. Würfl and H. -T. Hsu, "Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications," in IEEE Access, vol. 10, pp. 77826-77836, 2022.
  • Y.-F. Tsao, A. Desai and H. -T. Hsu, "Dual-Band and Dual-Polarization CPW Fed MIMO Antenna for Fifth-Generation Mobile Communications Technology at 28 and 38 GHz," in IEEE Access, vol. 10, pp. 46853-46863, 2022.
  • A. Desai, J. Kulkarni, M. M. Kamruzzaman, Š. Hubálovský, H. -T. Hsu and A. A. Ibrahim, "Interconnected CPW Fed Flexible 4-Port MIMO Antenna for UWB, X, and Ku Band Applications," in IEEE Access, vol. 10, pp. 57641-57654, 2022.
  • H. -L. Ko et al., "Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability," in IEEE Journal of the Electron Devices Society, vol. 10, pp. 188-191, 2022.
  • Weng, Y.-C.; Lin, Y.-C.; Hsu, H.-T.; Kao, M.-L.; Huang, H.-Y.; Ueda, D.; Ha, M.-T.-H.; Yang, C.-Y.; Maa, J.-S.; Chang, E.-Y.; Dee, C.-F. A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer. Materials 2022, 15, 703.
  • Wang, C.; Chen, Y.-C.; Hsu, H.-T.; Tsao, Y.-F.; Lin, Y.-C.; Dee, C.-F.; Chang, E.-Y. Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications. Materials 2021, 14, 6558.
  • Jou, H.-J.; Chou, L.-Y.; Chang, W.-C.; Ho, H.-C.; Zhang, W.-T.; Ling, P.-Y.; Tsai, K.-H.; Chen, S.-H.; Chen, T.-H.; Lo, P.-H.; Chen, M.; Hsu, H.-T. "An Automatic Platform Based on Nanostructured Microfluidic Chip for Isolating and Identification of Circulating Tumor Cells". Micromachines 2021, 12, 473.
  • Y.-F. Tsao and H.-T. Hsu, "A 52-58 GHz Power Amplifier with 18.6-dBm Saturated Output Power for Space Applications", in IEEE Transactions of Circuits and Systems II : Express Briefs, vol.68, no.6, pp.1927-1931, June 2021.
  • Chang, T., et al.: Compact phase shifter using arbitrary length of two coupled transmission lines. IET Circuits Devices Syst. 15( 5), 403– 414 (2021).
  • Tso-Jung Chang, Yi-Fan Tsao, Ting-Jui Huang, and Heng-Tung Hsu, “Bandwidth Improvement of Conventional Dual-band Power Divider Using Physical Port Separation Structure,” Electronics 2020, 9(12), December 2020.
  • Chien-Ming Tsao, Yi-Fan Tsao, Tzu-Shuen Lin, Ting-Jui Huang, and Heng-Tung Hsu, “Compact low-noise power amplifier design and implementation for millimetre wave frequencies,” IET Circuits, Devices & Systems, Volume 14, Issue 7, p. 1026-1031 2020.
  • Min-Lu Kao, Minh Thien Huu Ha, Yuan Lin, You-Chen Weng, Heng-Tung Hsu, and Edward Yi Chang, “Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer,” Applied Physics Express 13, 065501 (2020).
  • Tso-Jung Chang, Krishna Pande, and Heng-Tung Hsu, “Novel Low-Cost Power Divider for 5.8 GHz,” Electronics, 2020, 9(4) 699.
  • Y.C. Lin, S.H. Chen, P.H. Lee, K.H. Lai, T. J. Huang, Edward Y. Chang, and Heng-Tung Hsu, “Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications”, Micromachines 2020, 11(2), 222.
  • Yi-Fan Tsao, Joachim Würfl, and Heng-Tung Hsu, “Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks,” Electronics, 2020, 9(2), 270.
  • Kuan Ning Huang, Yueh-Chin Lin, Jia-Ching Lin, Chia Chieh Hsu, Jin Hwa Lee, Chia-Hsun Wu, Jing Neng Yao, Heng-Tung Hsu, Venkatesan Nagarajan, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai, Chao Hsin Chien & Edward Yi Chang, “Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications,” Journal of Electronic Materials 49, 1348-1353 (2020).
  • Jing Neng Yao, Yueh Chin Lin, Yin Chieh Wong, Ting Jui Huang, Heng-Tung Hsu, Simon M. Sze, and Edward Y. Chang, “Potential of the p-gate InAs HEMT for high-speed and low-power logic applications,” ECS Journal of Solid State Science and Technology, volume 8, Issue 6, p319-p321 (2019).
  • Jing Neng Yao, Yueh Chin Lin, Min Song Lin, Ting Jui Huang, Heng-Tung Hsu, Simon M. Sze, and Edward Y. Chang, “Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications,” Solid-State Electronics, 55-60 157 (2019).
  • Jing-Neng Yao, Yueh-Chin Lin, Heng-Tung Hsu, Kai-Chun Yang, Hsiang-Hua Hsu, Simon M. Sze, and E. Y. Chang, “Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications”, Journal of the Electron Device Society, vol.6, 2018, pp. 797-802.
  • Huan-Chung Wang, Huan-Fu Sua, Quang-Ho Luc, Ching-Ting Lee, Heng-Tung Hsu and Edward Yi Chang, “Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication”, ECS Journal of Solid State Science and Technology, S3106-S3109, volume 6, Issue 11, 2017.
  • Yen-Ku Lin, Shuichi Noda, Chia-Ching Huang, Hsiao-Chieh Lo, Chia-Hsun Wu, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang, “High-Performance GaN MOSHEMTs Fabricated with ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications”, IEEE Electron Device Letters, 771-774, June 2017.​
  • Wen-Hao Wu, Yueh-Chin Lin, Ping-Chieh Chin, Chia-Chieh Hsu, Jin-Hwa Lee, Shih-Chien Liu, Jer-shen Maa, Hiroshi Iwai, Edward Yi Chang , Heng-Tung Hsu, “Reliability improvement in GaN HEMT power device using a field plate approach”, Solid-State Electronics, 64-69 133 (2017).
  • Huang, L. C., Chang, C. H., Lin, Y. C., and Hsu, H. T., “Effect of surface passivation on the electrical performance of AlGaN/GaN high-electron-mobility transistors with slant field plates fabricated using deep-UV lithography”, Physica status solidi C, March 2017.
  • Yen-Ku Lin, Shuichi Noda, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang, “AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications”, IEEE Electron Device Letters, 1395-1398, November 2016.
  • S. P. Tsai, H. T. Hsu, J. Wuerfl and E. Y. Chang, “Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design”, IEEE Transactions on Electron Devices, pp. 3876-3881, October 2016.
  • Ching-Hsiang Hsu, Wang-Cheng Shih, Yueh-Chin Lin, Heng-Tung Hsu, Hisang-Hua Hsu, Yu-Xiang Huang, Tai-Wei Lin, Chia-Hsun Wu, Wen-Hao Wu, Jer-Shen Maa, Hiroshi Iwai, Kuniyuki Kakushima and Edward Yi Chang, “Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric”, Japanese Journal of Applied Physics, 55, 4S, March 2016.
  • Faiz Aizad Fatah, Yueh-Chin Lin, Ren-Xuan Liu, Kai-Chun Yang, Tai-We Lin, Heng-Tung Hsu, Jung-Hsiang Yang, Yasuyuki Miyamoto, Hiroshi Iwai, Chenming Calvin Hu, Sayeef Salahuddin and Edward Yi Chang, “A 60-nm-thick enhancement mode  In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,” Applied Physics Express, Vol. 9, Issue 2, pp. 026502-026502-3 2016 (SCI).
  • Faiz Aizad Fatah, Yueh-Chin Lin, Tsung-Yun Lee, Kai-Chun Yang,Ren-Xuan Liu, Jing-Ray Chan, Heng-Tung Hsu, Yasuyuki Miyamoto, and Edward Yi Chang, “Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications,” ECS Journal of Solid State Science and Technology, volume 4, issue 12, N157-N159, 2015. (SCI)
  • Wei-Ching Huang, Kuan-Shin Liu, Yuen-Yee Wong, Chi-Feng Hsieh, Edward Yi Chang, and Heng-Tung Hsu, “Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors,” Japanese Journal of Applied Physics, Vol. 54, no. 7, 071001, 2015. (SCI)
  • Szu-Ping Tsai, Heng-Tung Hsu, Yung-Yi Tu, and Edward Yi Chang, “Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics,” Applied Physics Express, Vol. 8, Issue 3, pp. 034101-034101-3 2015 (SCI).
  • Meng-Ru Wu, Heng-Tung Hsu, Chien-Jang Wu, and Shoou-Jinn Chang, “Terahertz Negative Refraction in a High-Temperature Superconducting Material,” IEEE Transactions on Terahertz Science and Technology, vol. 5, no. 2, pp. 230-235, March 2015. (SCI)
  • Heng-Tung Hsu; Chien-Jang Wu, “Thickness-Dependent Transmission in a Finite Photonic Crystal Containing Nearly Ferroelectric Superconductor,” Selected Topics in Quantum Electronics, IEEE Journal of , vol.21, no.2, pp.1-5, March 2015.(SCI)
  • Che-Yang Chiang and Heng-Tung Hsu and Edward Y. Chang, “Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application,” Japanese Journal of Applied Physics, vol. 53, No. 11, pp. 110311-1-110311-4, 2014. (SCI)
  • Heng-Tung Hsu; Ting-Jui Huang, “A 1 X 2 Dual-Band Antenna Array for Radio-Frequency Identification (RFID) Handheld Reader Applications,” Antennas and Propagation, IEEE Transactions on , vol.62, no.10, pp.5260,5267, Oct. 2014(SCI)
  • Meng-Ru Wu; Heng-Tung Hsu; Chien-Jang Wu; Shoou-Jinn Chang, “Frequency Response of a Ferroelectric Material in Double-Negative Region,” Photonics Journal, IEEE , vol.6, no.5, pp.1,11, Oct. 2014(SCI)
  • Szu-Ping Tsai, Heng-Tung Hsu, Che-Yang Chiang, Yung-Yi Tu, Chia-Hua Chang, Ting-En Hsieh, Huan-Chung Wang, Shih-Chien Liu, and Edward Yi Chang, “Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active- Region Bumps Induced Piezoelectric Effect,” Electron Device Letters, IEEE , vol.35, no.7, pp.735,737, July 2014(SCI)
  • Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; Heng-Tung Hsu; Chang, E.Y.; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai, "Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications," Microwave and Wireless Components Letters, IEEE , vol.24, no.1, pp.11,13, Jan. 2014 (SCI)
  • Hsi-Tseng Chou, Tzu-Chung Chao, Heng-Tung Hsu, Li-Ruei Kuo, and Fang-Yao Kuo, “Antenna miniaturisation and broadband design via a decomposition of structure into conjugated elemental antennas for natural impedance matching,” IET Microwaves, Antenna & Propagation, Vol. 7, Iss. 15, pp. 1238 – 1246, 2013 (SCI).
  • Chin-Te Wang, Heng-Tung Hsu, Che-Yang Chiang, Edward Yi Chang, and Wee-Chin Lim, “Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology,” Applied Physics Express, 6 (2013)126701 (SCI).
  • H.T.Hsu and T. J. Huang, “A Koch-shaped Log-Periodic Dipole Array (LPDA) Antenna for Universal Ultra-High-Frequency (UHF) Radio Frequency Identification (RFID) Handheld Reader,” IEEE Transactions on Antennas and Propagation, Vol. 61, No.9, pp.4852-4856, September 2013.(SCI).
  • E.Y.Chang, C.I.Kuo, H.T.Hsu, C.Y.Chiang, and Y. Miyamoto, “InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications,” Applied Physics Express, Vol. 6, Issue 3, pp. 034001-034001-3 2013 (SCI).
  • Chia-Hui Yu, Heng-Tung Hsu, Che-Yang Chiang, Chien-I Kuo, Yasuyuki Miyamoto, and Edward Yi Chang, “Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility-Transistor Fabricated Using BCl3 Dry Etching,” Japanese Journal of Applied Physics, 52 (2013) 020203, February, 2013 (SCI).
Conference Papers
  • C. K. Shreyanth, K. G. S, A. Desai, Y.-F. Tsao, F. Morab and H. -T. Hsu, "Viability Analysis of Liquid Metals for Planar Antenna Design at mm-wave 5G Applications," 2024 2nd International Conference on Networking, Embedded and Wireless Systems (ICNEWS), Bangalore, India, 2024, pp. 1-6.
  • H. -Y. Luo and Y.-F. Tsao, "A Highly-Efficient Power Amplifier for V-band Inter-Satellite Link Applications," 2024 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), Taipei, Taiwan, 2024.
  • H. -Y. Luo and Y.-F. Tsao, "A High-Power Single-Pole-Double-Throw Switch with High Isolation for Millimeter-Wave Satellite Applications," 2024 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), Taipei, Taiwan, 2024.
  • C. -Y. Hsia, P. -H. Chiu, Y.-F. Tsao and H. -T. Hsu, "Investigation of RF Performance Degradations in AlGaN/GaN HEMTs using High-Power DC Stress at High Ambient Temperature," 2024 International Electron Devices & Materials Symposium (IEDMS), Taichung, Taiwan, Aug. 2024.
  • Y.-F. Tsao, A. Desai, H. -Y. Luo, H. -T. Chou and H. -T. Hsu, "Reconfigurable High Power Dual-Band Dual-Polarized Single-Chip Transmitter Circuit for mm-wave Satellite Applications," 2024 IEEE International Symposium On Antennas And Propagation (ISAP), Incheon, Republic of Korea, 2024.
  • A. Desai, Y.-F. Tsao, P. -H. Chiu and H. -T. Hsu, "Reconfigurable Dual-Band Dual Circularly Polarized (DB-DCP) Antenna Array for Millimeter-Wave Satellite Applications," 2024 IEEE International Symposium on Antennas and Propagation and INC/USNC‐URSI Radio Science Meeting (AP-S/INC-USNC-URSI), Firenze, Italy, 2024, pp. 2671-2672.
  • Y.-F. Tsao, H. -T. Hsu and Jiun-Jie Huang, "A GaN-based Doherty Power Amplifier for 5G Basestation Applications," The 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM 2024), Hong Kong, PRC, 2024.
  • Y.-F. Tsao, A. Desai and H. -T. Hsu, "Scalable GaN-Based 64-Element Circularly-Polarized Transceiver with 65-dBm Saturated EIRP for Millimeter-Wave CubeSat Applications," 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024, Washington, DC, USA, 2024, pp. 690-693.
  • Y.-F. Tsao and H. -T. Hsu, "A Wideband Linear GaN-on-SiC Power Amplifier using Harmonic-Tuning Technique for 5G New-Radio FR2 Applications," 2024 IEEE International Symposium on Circuits and Systems (ISCAS), Singapore, Singapore, 2024, pp. 1-4.
  • J. -H. Tsai, Y. -H. Lin, Y.-F. Tsao, Y. Wang, A. Desai, and H. -T. Hsu, "A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications," 2023 Asia-Pacific Microwave Conference (APMC).
  • Y.-F. Tsao, Y. Wang, P. -H. Chiu, A. Desai, M. Wolf, S. Chevtchenko, J. Würfl and H. -T. Hsu, "Demonstration of a Millimeter-wave High-Power Transceiver Module using AlN Interposer," 2023 Asia-Pacific Microwave Conference (APMC).
  • A. Desai, Y.-F. Tsao, Y. Wang and H. -T. Hsu, "Planar Four-Port Dipole MIMO Antenna for 5G NR 257/258/261 Frequency Band Applications," 2023 IEEE International Symposium On Antennas And Propagation (ISAP), 2023.
  • Y.-F. Tsao, P. -H. Chiu, Y. Wang, T. -Y. Tsai and H. -T. Hsu, "A 100-Watt GaN Doherty Amplifier for 5G Base Station Applications," The 9th Taiwan and Japan Conference on Circuits and Systems (TJCAS 2023), 2023.
  • A. Desai, Y.-F. Tsao and H. -T. Hsu, "Dual-Band Branch Line Coupler-Based Circularly Polarized Antenna for Millimeter-Wave Applications," 2023 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (USNC-URSI), Portland, OR, USA, 2023, pp. 369-370.
  • Y. Wang, Y.-F. Tsao, P.-H. Chiu, T.-Y. Tsai, A. Desai, C.-M. Tsao, H.-C. Ho and H. -T. Hsu, “A 40-50 GHz Low-Loss Single-Pole-Double-Throw Switch for Millimeter-wave Applications,” The 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 18-19, 2023.
  • Y.-F. Tsao, Y. Wang, P. -H. Chiu and H. -T. Hsu, "A High Survivability Low-Noise Amplifier for V-band Applications," 2022 IEEE International RF and Microwave Conference (RFM), Kuala Lumpur, Malaysia, 2022, pp. 1-3.
  • Y.-F. Tsao, Y. Wang, H. -T. Hsu and A. Desai, "Planar Beam Switched Antenna Module for 5G New-Radio FR2 Applications," 2022 Asia-Pacific Microwave Conference (APMC), Yokohama, Japan, 2022, pp. 396-398.
  • S. K. Rathaur, T. -Y. Yang, C. -Y. Yang, E. Y. Chang, H. -T. Hsu and A. Dixit, "Time-dependent Multiple Gate Voltage Reliability of Hybrid Ferroelectric Charge Trap Gate Stack (FEG) GaN HEMT for Power Device Applications," 2022 IEEE Latin American Electron Devices Conference (LAEDC), Cancun, Mexico, 2022, pp. 1-4.
  • Y.-F. Tsao, Y. Wang, S. Chevtchenko, M. Wolf, J. Würfl and H. -T. Hsu, "Modeling of Hot-Via Technology for System-in-Package at Millimeter-wave Frequencies," 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2022, pp. 88-89.
  • ​​Y.-F. Tsao, Y. Wang, C. -M. Tsao, H. -J. Würfl and H. -T. Hsu, "An X- to Ka-band Single-Pole-Double-Throw Switch with Good Power Handling Capability," 2021 IEEE Asia-Pacific Microwave Conference (APMC), 2021, pp. 229-231.
  • Y. Wang, Y.-F. Tsao, C. -M. Tsao, H. -J. Würfl and H. -T. Hsu, "A Polarization Switchable Antenna Switch Module for Ka-band Application," 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2021, pp. 1-3.
  • Y.-F. Tsao, C. -M. Tsao and H. -T. Hsu, "A New Design Technique for Power Amplifiers Operating Close to Unit-Current-Gain Cutoff Frequency," 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2021, pp. 1-3.
  • Chun Wang, Yueh-Chin Lin, Heng-Tung Hsu, Chia-Chun Lee, Ting-Jui Huang and Edward Yi-Chang, " Thin Barrier Enhancement-Mode AlGaN/GaN HEMTs with Oxidation Treatment and ALD Al2O3 Dielectric Layer for Power Amplifier Application," 2021 International Conference on Microelectronics and Nanotechnology (ICMN), Berlin, Germany, Apr. 2021.
  • Y.-F. Tsao, C. -M. Tsao, H. -T. Hsu and J. Würfl, "A High Power Ku- to Ka-Band Single-Pole-Double-Throw Switch with Capacitive Loading for Isolation Improvement," 2020 IEEE MTT-S Latin America Microwave Conference (LAMC 2020), 2021, pp. 1-3.
  • Y.-W. Lin, K. Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, Y.-F. Tsao, T.-J. Huang, H.-T. Hsu, K. Kakushima, "Ferroelectric HfO2 Capacitors for Varactor Application in GHz," in ECS Transactions, Vol.98, no. 3.
  • Heng-Tung Hsu, Ting-Jui Huang, Yi-Fan Tsao, and Joachim Würfl, “Bandwidth Improvement of Slot Antenna Arrays Using Substrate Integrated Waveguide (SIW) Through Optimal Design of Radiating Slots.” 2019 IEEE Asia Pacific Microwave Conference (APMC), Kyoto, Singapore, 2019.
  • Chun Wang ,Heng-Tung Hsu , Kun-Ting Cheng, Ting-Jui Huang, and Edward Yi Chang, ”Effect of T-gate Geometry on the AlGaN/GaN HEMT Device for High Frequency Application,” 13th Topical Workshop on Heterostructure Microelectronics (TWHM2019),Toyama, Japan.
  • Chun Wang , Heng-Tung Hsu , Ke-Yow Chen, Ting-Jui Huang, and Edward Yi Chang , ”High Breakdown Voltage of AlGaN/GaN HEMTs with Field Plate for RF Application,” 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Onna-son, Okinawa, Japan.
  • Y. C. Lin, M. W. Lee, M. Y. Tsai, C. Wang, J. N. Yao, T. J. Huang, H. T. Hsu, J. S. Maa, and Edward Y. Chang, “Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs,” The 49th European Microwave Conference (EuMC), Paris, France, September 2019.
  • C. Wang, Y. C. Lin, C. N. Kuo, M. W. Lee, J. N. Yao, T. J. Huang, H. T. Hsu, and Edward Y. Chang, “Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application,” The 49th European Microwave Conference (EuMC), Paris, France, September 2019.
  • Yi-Fan Tsao, Ting-Jui Huang, Heng-Tung Hsu, Chia-Wei Wu, “Planar Diplexer Design Using Hairpin Resonators Loaded with External Capacitors for Improvement of Isolation and Stopband Rejection Levels,” The 49th European Microwave Conference (EuMC), Paris, France, September 2019.
  • Chun Wang, Heng-Tung Hsu, Ting-Jui Huang, Jun-Kai Fan, Edward Chang “Effect of AlN Spacer on the AlGaN/GaN HEMT Device Performance at Millimeter-wave Frequencies,” 2018 IEEE Asia Pacific Microwave Conference (APMC), Kyoto, 2018.
  • Peng-I Mei, Heng-Tung Hsu, Yi-Fan Tsao, Ting-Jui Huang, Che-Yang Chiang, “Single-pole Double-throw Switch Using Stacked-FET Configuration at Millimeter Wave Frequencies,” 2018 IEEE Asia Pacific Microwave Conference (APMC), Kyoto, 2018.
  • T. Huang, H. T, Hsu  and H. Chou, "A Compact Dual-band Antenna at Ka-band Frequencies for Next Generation Cellular Applications," 2018 15th European Radar Conference (EuRAD), Madrid, Spain, 2018, pp. 269-272.
  • Song-Tsuen Peng, Heng-Tung Hsu; Ting-Jui Huang; Yi-Fan Tsao, and Tso-Jung Chang ”Electromagnetic Waves in Bi-isotropic Medium” Progress In Electromagnetics Research Symposium (PIERS), Toyama, 2018.
  • H.-T. (Becker) Hsu, Y.-C. Lin, W.-H. Wu, T.-J. Huang, Y.-F. Tsao, E. Y. Chang,”Performance evaluation of AlGaN/GaN HEMTs with field-plate structure,” 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2018) [Invited].
  • Heng-Tung Hsu, Ting-Jui Huang, and Yi-Fan Tsao, “Ka-band Antipodal Dual Exponentially Tapered Slot Antenna for Next Generation Mobile Communication System Applications”, 2017 IEEE Asia-Pacific Microwave Conference, APMC 2017, Kuala Lumpur, Malaysia, November 2017.
  • Tso-Jung Chang, Ting-Jui Huang and Heng-Tung Hsu, “Miniaturized Wilkinson Power Divider with Complex Isolation Network for Physical Isolation”, 47th European Microwave Conference, EuMC2017, Nuremberg, Germany, October 2017.
  • C. C. Hsu, J. H. Lee, Y. C. Lin, J. C. Lin, C. H. Wu, J. N. Yao, H. T. Hsu, K. Kakushima, H. Iwai, and E. Y. Chang, “High-performance E-mode Recessed Gate GaN Power MIS-HEMT with La-silicate Gate Insulator,” 2017 International Conference on Solid State Devices and Materials (SSDM 2017), Sendai, Japan, September 2017.
  • Ying-Chieh Wang, Jing-Neng Yao, Yueh-Chin Lin, Heng-Tung Hsu, Ting-Jui Huang, Zhi-Yi Huang, and Edward Yi Chang, “Study of Enhance Mode p-gate HEMT for Logic Application”, 2017 International Conference on Solid State Devices and Materials (SSDM 2017), Sendai, Japan, September 2017.
  • Jing-Neng Yao, Yueh-Chin Lin, Heng-Tung Hsu, Ting-Jui Huang, Min-Song Lin, Ying-Chieh Wang, Zhi-Yi Huang, Simon M. Sze, and Edward Yi Chang, “Enhanced-Mode InAs QWFETs with the Source Connected Field Plate Technique for Low Power Logic Applications”, 2017 International Conference on Solid State Devices and Materials (SSDM 2017), Sendai, Japan, September 2017.
  • Tso-Jung Chang, Ting-Jui Huang and Heng-Tung Hsu, “A New Design of Wilkinson Power Divider Using Radial Stubs Featuring Size Reduction and Bandwidth Enhancement with Physical Isolation”, 2017 IEEE WAMICON, Florida, USA, April 2017.
  • Heng-Tung Hsu, Yueh-Chin Lin, Lu-Che Huang, Chia-Hua Chang, Ting-En Hsieh, Yasushi Itoh, and Edward Yi Chang, “The Effect of Surface Passivation on the Electrical Performance of AlGaN/GaN HEMTs with Slant Field Plates”, Compound Semiconductor Week 2016 (CSW2016), Toyama, Japan, June 2016.
  • Yueh-Chin Lin, Tai-Wei Lin, Chia-Hsun Wu, Jing-Neng Yao, Heng-Tung Hsu, Wang-Cheng Shih, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai, Edward-Yi Chang, “Optimization of gate insulator material for GaN MIS-HEMT”, 28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech, June 2016.
  • Ting-Jui Huang, Heng-Tung Hsu, “A dual-frequency and dual-polarized antenna design for long term evolution applications,” Antennas and Propagation Society International Symposium (APSURSI), 2015 IEEE , vol., no., pp.2009-2010, 19-24 July 2015
  • T. G. Ma, W. J. Liao, S. Y. Chen, T. L. Wu, R. B. Wu, H. T. Hsu, S. T. Peng, Z. M. Tsai, Y. H. Pang, H. H. Yu, and H. C. Lin, “SAVE and iEMPT: The EM revitalization program in Taiwan,” Antennas and Propagation Society International Symposium (APSURSI), 2015 IEEE , vol., no., pp.1025-1026, 19-24 July 2015
  • Ting-Jui Huang, Heng-Tung Hsu, “A dual-frequency and dual-polarized antenna with improved front-to-back ratio for LTE applications,” Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE , vol., no., pp.412,413, 6-11 July 2014
  • A. Rasmi, I. M. Azmi, A.I.A. Rahim, Heng-Tung Hsu, and Edward Yi Chang, “30GHz 2-stage MMIC low noise amplifier using GaAs pseudomorphic HEMT,” 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).
  • Hsi-Tseng Chou, Kai-Hao Bai, Chun-Chin Sun, Chien-Te Yu, and Heng-Tung Hsu, “Design of multi-beam antenna array using tapered slot elements,” in Proceedings of 2013 URSI International Symposium on Electromagnetic Theory (EMTS).
  • Heng-Tung Hsu, Chien-I Kuo, Che-Yang Chiang, and E. Y. Chang, “Effect of Indium Content on the Logic Performance of 80-nm Quantum-Well Field-Effect Transistors (QWFETs),” 2013 International Electron Devices and Materials Symposium, IEMDS 2013, Nantou, Taiwan, November 2013.
  • H. T. Hsu and S. T. Peng, “Simplicity: Unified Theory of Electromagnetics,” 2013 Asia-Pacific Radio Science Conference, Taipei, Taiwan, September 2013. (invited)
  • T. J. Huang and H. T. Hsu, “A Compact Printed Bowtie-Based Antenna with Improved Radiation Performance for Universal LTE Applications,” 2013 Asia-Pacific Radio Science Conference, Taipei, Taiwan, September 2013.
  • S. W. You, T. J. Huang and H. T. Hsu, “A Planar End-fire Array Antenna Covering X- to Ka-band,” 2013 Asia-Pacific Radio Science Conference, Taipei, Taiwan, September 2013.
  • Ting-Jui Huang, Shin-Chiang Lin and Heng-Tung Hsu, “1-by-7 Circularly-polarized Shaped-beam Antenna Array for Radio Frequency Identification (RFID) Reader Applications at 2.4 GHz,” 2013 IEEE Antenna and Propagations Symposium, Orlando, USA, July 2013.
  • Heng-Tung Hsu and Che-Yang Chiang, “Miniaturization of Hairpin Resonator Filters with Improved Harmonic Suppression by Using Lumped Capacitors,” 2013 IEEE International Microwave Symposium, Seattle, USA, June 2013.
  • H.T.Hsu, J.J.Wu, C.C.Liu, and C. J. Wu, “Numerical Study of Effective Plasma Frequency of a Plasma Photonic Crystal in the Presence of Magnetic Field,” 2013 Progress in Electromagnetic Research Symposium, Taipei, Taiwan, March 2013.
Updated: 2024.11.20